Memory device with dynamic cache management

ABSTRACT

A memory system includes a memory array having a plurality of memory cells; and a controller coupled to the memory array, the controller configured to: designate a storage mode for a target set of memory cells based on valid data in a source block, wherein the target set of memory cells are configured with a capacity to store up to a maximum number of bits per cell, and the storage mode is for dynamically configuring the target set of memory cells in as cache memory that stores a number of bits less per cell than the corresponding maximum capacity.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.16/697,724, filed Nov. 27, 2019; which is a continuation of U.S. patentapplication Ser. No. 15/693,178, filed Aug. 31, 2017, now U.S. Pat. No.10,509,722; each of which is incorporated herein by reference in itsentirety.

TECHNICAL FIELD

The disclosed embodiments relate to memory devices, and, in particular,to memory devices with a mechanism for dynamic management of cachememory functions.

BACKGROUND

Memory systems can employ memory devices to store and accessinformation. The memory devices can include volatile memory devices,non-volatile memory devices, or a combination device. The non-volatilememory devices can include flash memory employing “NAND” technology orlogic gates, “NOR” technology or logic gates, or a combination thereof.

Memory devices, such as flash memory, utilize electrical charges, alongwith corresponding threshold levels or processing voltage levels, tostore and access data. In storing the data, the memory devices may havesome storage portions that provide faster operating speeds and otherstorage portions that provide higher storage capacity and/or density.While attempts have been made to optimize memory devices to best exploitthese different capabilities, various challenges (e.g., numerousdifferent usage conditions, changes in performance characteristics ofthe flash memory devices caused by usage, etc.) have made it difficultto take full advantage of the different characteristics.

Thus, there is a need for a memory device with dynamic cache management.In view of the ever-increasing commercial competitive pressures, alongwith growing consumer expectations and the desire to differentiateproducts in the marketplace, it is increasingly desirable that answersto these problems be found. Additionally, the need to reduce costs,improve efficiencies and performance, and meet competitive pressuresadds an even greater pressure to find these answers.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram of a memory system with dynamic cachemanagement in accordance with an embodiment of the present technology.

FIGS. 2A, 2B and 2C illustrate a garbage collection function inaccordance with an embodiment of the present technology.

FIG. 3 illustrates an example method of operating the memory system inFIG. 1 in accordance with embodiments of the present technology.

FIG. 4 is a schematic view of a system that includes a memory device inaccordance with embodiments of the present technology.

DETAILED DESCRIPTION

The technology disclosed herein relates to memory devices, systems withmemory devices, and related methods for dynamically managing cachememory for the memory devices. The memory systems can use valid datafound in source blocks of garbage collection to determine or recognize atype or a pattern of work being processed by the memory systems andmanage the caching function accordingly.

A memory device can include single-level cells (SLCs) for holding orrepresenting one bit per cell (e.g., in one of two charge levels) and/orextra-level cells (XLCs) for holding or representing multiple bits percell (e.g., in one of more than two charge levels) according to a typeor a characteristic of the work being processed by the memory device. AnSLC can be programmed to a targeted one of two different data statesthat can be represented by the binary units 1 or 0. An XLC can beprogrammed to a targeted one of more than two data states.

For example, an XLC can include a flash memory cell that can beprogrammed to any one of four states (e.g, represented by the binary 00,01, 10, 11) to store two bits of data. Such XLCs are known as amultilevel cells (MLCs). Still other XLCs can include flash memory cellsthe can be programmed to any one of eight data states (e.g, 000, 001,010, 011, 100, 101, 110, 111) to store three bits of data in a singlecell. Such cells may be referred to as triple level cells (TLC). Evenhigher number of data states are possible for XLCs. For example, quadlevel cells (QLCs) can be programmed to any one of 16 data states (e.g,0000, 0001, 0010, 0011, 0100, 0101, 0110, 0111, 1000, 1001, 1010, 1011,1100, 1101, 1110, 1111) for storing four bits of data.

The memory cells capable of storing higher numbers of data states canprovide higher density memories or bulk memory without increasing thenumber of memory cells, since each cell can represent more than one bit.While more information can be stored in a given number of cells whenoperating as XLCs, write performance may reduce due to slowerprogramming times required for XLCs. For example, write performance maydegrade in employing additional or detailed processes to write dataaccording to tolerance windows that decrease by increasing the number ofpossible data states within a given range. As such, SLCs may be used ascache memory for NAND flash memory devices. The SLC cache can includestatic SLC cache defined by SLC reserved blocks or dynamic SLC cachedefined by using XLC blocks in SLC mode.

The SLC cache can be generated or reclaimed during idle times, such asduring a break or pause that occur while processing host data, so thatthe host data can be written in the SLC mode. However, idle times mayoccur less frequently for certain work conditions, which can lead to thememory devices failing to release sufficient amount of blocks for writesand thus failing to catch up with the host write sizes.

Conventionally, the memory devices pick new host blocks (i.e. memoryblocks designated for upcoming or subsequent writes) from XLC blockpools, and thus writing the subsequent host data in XLC mode, toincrease the block sizes and slow down the block consumption rate.Consequently, the write performance would decrease in using the XLC modein comparison to the SLC mode. Under steady state (i.e., work conditionswith less frequent idle times, such as when a predetermined number ofmemory blocks or pages are filled before detection of an idle time eventrepresenting a pause in storing the data), operating the XLC memoryblocks in SLC mode can reduce the effective size of the memory blocks,reducing the storage capacity. For example, for blocks capable ofrepresenting two bits, operating in the SLC mode would reduce thecapacity by half. Also for example, operating TLC memory blocks in SLCmode would reduce the capacity to one-third original, and QLC blockswould be reduced to one-fourth, etc. Potential addresses that are lostdue to the reduction in capacity, such as corresponding to the remainingunused half, two-thirds, or three-fourths in the examples above, may beforced into garbage collection (i.e., a process that erases stale oruseless data and reclaims occupied memory blocks for reuse in storingnew data) for certain types of workloads.

Instead, in several embodiments of the present technology, a memorydevice can track valid data in memory block subject to garbagecollection to manage operating modes of memory blocks. The memory devicecan use the amount of valid data as an indication of write amplification(WA) associated with the work being performed by the memory device,where WA is representation of a size of the data intended to be writtenin the memory device 102 in comparison to an actual corresponding amountof information physically written in the memory device (e.g, due torewrites associated with operations for evening the number of writesacross cells, for reclaiming memory blocks, etc.). If the valid data isless than a threshold, the memory device can characterize the work aslow WA and open the host blocks in SLC mode even under steady state,thereby improving the performance of the memory device.

Further, the term “dynamic” as used herein describes operations,functions, actions or implementation occurring during the operation,usage or deployment of a memory device. Dynamically occurringoperations, functions, actions or implementation can occur after thedesign, manufacture, and initial testing, setup or configuration (e.g.,in a user environment).

FIG. 1 is a block diagram of a memory system 100 with dynamic cachemanagement in accordance with an embodiment of the present technology.The memory system 100 includes a memory device 102 having a memory array104 (e.g, NAND flash) and a controller 106. The memory device 102 canoperably couple the memory array 104 to a host device 108 (e.g, anupstream central processor (CPU)).

The memory array 104 can include circuitry configured to store data andprovide access to data. The memory array 104 can be provided assemiconductor, integrated circuits and/or external removable devices incomputers or other electronic devices. The memory array 104 includes aplurality of memory regions, or memory units 120. The memory units 120can be individual memory dies, memory planes in a single memory die, astack of memory dies vertically connected with through-silicon vias(TSVs), or the like. In one embodiment, each of the memory units 120 canbe formed from a semiconductor die and arranged with other memory unitdies in a single device package (not shown). In other embodiments, oneor more of the memory units 120 can be co-located on a single die and/ordistributed across multiple device packages. The memory device 102and/or the individual memory units 120 can also include other circuitcomponents (not shown), such as multiplexers, decoders, buffers,read/write drivers, address registers, data out/data in registers, etc.,for accessing and/or programming (e.g, writing) the data and otherfunctionality, such as for processing information and/or communicatingwith the controller 106.

Each of the memory units 120 includes an array of memory cells 122 thateach store data in a charge storage structure. The memory cells 122 caninclude, for example, floating gate, charge trap, phase change,ferroelectric, magnetoresitive, and/or other suitable storage elementsconfigured to store data persistently or semi-persistently. The memorycells 122 can be one-transistor memory cells that can be can beprogrammed to a target state to represent information. For instance,electric charge can be placed on, or removed from, the charge storagestructure (e.g, the charge trap or the floating gate) of the memory cell122 to program the cell to a particular data state.

The stored charge on the charge storage structure of the memory cell 122can indicate a threshold voltage (Vt) of the cell. The threshold voltagecan correspond to the different data states allowable for thecorresponding memory cell 122. For example, SLCs can be programmed to atargeted one of two different data states, which can be represented bythe binary units 1 or 0. Similarly, the threshold voltage can correspondto four data states for MLCs, eight data states for TLCs, 16 data statesfor QLCs, etc.

The memory cells 122 can be arranged in rows (e.g, each corresponding toa word line) and columns (e.g, each corresponding to a bit line). Eachword line can include one or more memory pages 124, depending upon thenumber of data states the memory cells 122 of that word line areconfigured to store.

For example, the memory cells 122 of a single word line (i.e., includinga single memory page 124) can each store one of two data states (e.g,SLC memory cells configured to store one bit each). Alternatively, thememory cells 122 of a single word line (i.e., including two memory pages124) can each store one of four data states (e.g, MLC memory cellsconfigured to store two bits each) and include two memory pages 124.Moreover, within the word line, pages 124 can be interleaved so that thememory cells 122 of the word line configured to store one of two datastates (e.g, SLC memory cells) can include two pages, in an “even-oddbit line architecture” (e.g, where all the memory cells 122 inodd-numbered columns of a single word line are grouped as a first page,and all the memory cells 122 in even-numbered columns of the same wordline are grouped as a second page). When even-odd bit line architectureis utilized in organizing word lines having the memory cells 122 thatare each configured to store larger numbers of data states (e.g, memorycells configured as MLC, TLC, QLC, etc.), the number of pages per wordline can be even higher (e.g, 4, 6, 8, etc.).

Each column can include a string of series-coupled memory cells 122coupled to a common source. The memory cells 122 of each string can beconnected in series between a source select transistor (e.g, afield-effect transistor) and a drain select transistor (e.g, afield-effect transistor). Source select transistors can be commonlycoupled to a source select line, and drain select transistors can becommonly coupled to a drain select line.

The memory device 102 can perform data operations using differentgroupings of the memory cells 122. For example, the memory pages 124 ofthe memory cells 122 can be grouped into memory blocks 126. Inoperation, the data can be written or otherwise programmed (e.g, erased)with regards to the various memory regions of the memory device 102,such as by writing to groups of pages 124 and/or memory blocks 126. InNAND-based memory, a write operation often includes programming thememory cells 122 in selected memory pages 124 with specific data values(e.g, a string of data bits having a value of either logic 0 or logic1). An erase operation is similar to a write operation, except that theerase operation re-programs an entire memory block 126 or multiplememory blocks 126 to the same data state (e.g, logic 0).

In other embodiments, the memory cells 122 can be arranged in differenttypes of groups and/or hierarchies than those shown in the illustratedembodiments. Further, while shown in the illustrated embodiments with acertain number of memory cells, rows, columns, blocks, and memory unitsfor purposes of illustration, in other embodiments, the number of memorycells, rows, columns, blocks, and memory units can vary, and can belarger or smaller in scale than shown in the illustrated examples.

For example, in some embodiments, the memory device 100 can include onlyone memory unit 120. Alternatively, the memory device 100 can includetwo, three, four, eight, ten, or more (e.g, 16, 32, 64, or more) memoryunits 120. While the memory units 120 are shown in FIG. 1 as includingtwo memory blocks 126 each, in other embodiments, each memory unit 120can include one, three, four eight, or more (e.g, 16, 32, 64, 100, 128,256 or more memory blocks). In some embodiments, each memory block 126can include, e.g, 2¹⁵ memory pages, and each memory page within a blockcan include, e.g, 2¹² memory cells 122 (e.g, a “4k” page).

The controller 106 can be a microcontroller, special purpose logiccircuitry (e.g, a field programmable gate array (FPGA), an applicationspecific integrated circuit (ASIC), etc.), or other suitable processor.The controller 106 can include a processor 131 configured to executeinstructions stored in memory. In the illustrated example, the memory ofthe controller 106 includes an embedded memory 133 configured to performvarious processes, operations, logic flows, and routines for controllingoperation of the memory system 100, including managing the memory device102 and handling communications between the memory device 102 and thehost device 108. In some embodiments, the embedded memory 133 caninclude memory registers storing, e.g, memory pointers, fetched data,etc. The embedded memory 133 can also include read-only memory (ROM) forstoring micro-code. While the exemplary memory device 102 illustrated inFIG. 1 has been illustrated as including the controller 106, in anotherembodiment of the present technology, a memory device may not include acontroller, and may instead rely upon external control (e.g, provided byan external host, or by a processor or controller separate from thememory device).

The memory system 100 can implement dynamic SLC caching 130 foroperating on data 110 with the memory array 104 (e.g., reading, writing,erasing, etc.). For the dynamic SLC caching 130, the memory system 100can temporarily store data (e.g., most active data) on XLC units 132configured in SLC mode to improve access or read times, write times, ora combination thereof. The XLC units 132 are memory cells capable ofstoring more than one bit of data. For example, the XLC units 132 caninclude MLCs, TLCs, QLCs, or any other memory cells capable of holdingmore than one bit per cell.

In FIG. 1 , the XLC units 132 are illustrated using a page map. The pagemap can represent groupings of the memory cells 122, addresses, types,or a combination thereof for the memory pages 124 for each of the memoryblocks 126. The page map can identify logical page types, such as lower,upper, or extra page, and also word-line and word-line group associatedwith each of the pages. The page map can further include bits-per-cell(illustrated as ‘bpc’) corresponding to the bit-holding capacity of eachcell (e.g, SLCs corresponds to bpc value of one and XLCs correspond tobpc values greater than one).

The memory system 100 can determine a storage mode 134 for controllingthe storage capacity and processing time of the XLC units 132. Thestorage mode 134 can be represented by a signal or parameter indicatinga storage capacity of the corresponding XLC units 132. The storage mode134 can indicate that the XLC units 132 are used to store either anumber of bits less than their corresponding full capacity, or a numberof bits corresponding to their full capacity.

For example, the memory system 100 can designate the storage mode 134 asSLC mode 136 or XLC mode 138. The SLC mode 136 can include the signal orparameter used to indicate that the corresponding XLC units 132 are usedto store one bit per cell. In other words, the memory system 100 can usethe SLC mode 136 to have the XLC units 132 operate as though they wereSLC units. In contrast, the memory system 100 can use the XLC mode 138to have the XLC units 132 operate at their full capacity (e.g. storingtwo bits per cell for MLC units, three bits per cell for TLC units, fourbits per cell for QLC units, etc.).

For illustrative purposes, the XLC mode 138 is described below asindicating that the corresponding memory cells 122 are used to store anumber of bits per cell corresponding to their full capacity. However,it is understood that the memory system 100 can utilize differentsubsets of control signals or parameters to designate storage modes inwhich multiple bits per cell are used, but at less than the fullcapacity of the corresponding memory cells 122 (e.g., using TLC cells inMLC mode, etc.).

Using the SLC mode 136, the memory system 100 can improve the writeperformance while reducing the storage density of the XLC units 132.Alternatively, using the XLC mode 138 can reduce the write performancewhile increasing the storage density of the XLC units. When the memoryblocks 126 are operated in the XLC mode 138, the full range of logicalblock addresses (LBA) can be accommodated on the memory array 104. Incontrast, utilizing MLC, TLC or QLC blocks in the SLC mode 136 canreduce the accessible LBA range for those blocks by factor of 2, 3 or 4,respectively.

While the full LBA range may be available in XLC mode, writing with thefull storage capacity (e.g., at the maximum number of supported bits percell) can be slower than writing one bit per cell for various reasons.For example, operating the XLC units 132 in the SLC mode 136 can allowlarger margins for read thresholds and fewer iterations for incrementalstep pulse programming (ISPP) used to write the target data. To writedata according to ISPP, the memory device 102 can store charge on thecharge storage structure of a memory cell via incremental programming.To program the memory cell to a desired target state, a series ofincremental charges can be applied at multiple times to increase thecharge stored on the cell's charge storage structure. After eachprogramming step, the charge stored on the charge storage structure canbe verified to determine whether it has reached the desired targetstate. By operating in the SLC mode, the memory system 100 can uselarger amounts of charge for each increment such that less iterationsare needed to reach the desired level.

For certain workload types 146 (i.e., categorizations for operationshandled by the memory device 102), improvement of the write performancecan lead to an overall gain without experiencing much negative impactfrom the reduction in the storage density. During the dynamic SLCcaching 130, the SLC cache (e.g, the XLC units 132 operating in SLC mode136) can be generated or reclaimed during idle times. However, somecategories of work can be without the idle times or include relativelyinfrequent idle times, such as continuous workload 150 (i.e., steadystate), which leads to expenditure or usage of all available SLC cache.The memory system 100 can open the XLC units 132 in SLC mode 136 (i.e.,instead of the conventional approach of opening them in the XLC mode138) based on estimating or recognizing an amount of WA associated withthe work being performed by the memory device 102.

FIGS. 2A, 2B and 2C illustrate a progression for a garbage collection(GC) function 202 in accordance with an embodiment of the presenttechnology. The GC function 202 finds old or stale data for erasure inreclaiming the memory block 126 of FIG. 1 for reuse in storing new data.Through the GC function 202, valid data 204 from one or more pages canbe collected and written to a new empty page and the old page can beinvalidated, erased, and reclaimed for reuse and subsequent storage ofnew incoming data. The valid data 204 is a correct or up-to-dateinstance of the data 110 of FIG. 1 stored in the memory cells 122 ofFIG. 1 intended for later access. When previous data is updated, flashmemory devices write the new data (i.e., the valid data 204) to adifferent location, with the old data becoming stale or unnecessary,instead of directly overwriting the old data with the new data. The GCfunction 202 can remove such stale or unnecessary data while retainingthe valid data 204 at a new location. Since flash memory devices writein increments of the memory pages 124 of FIG. 1 and erase in incrementsof the memory blocks 126, the garbage collection function 202 can movepages of data and free up memory blocks for erase operations.

FIGS. 2A, 2B and 2C conceptually illustrate a sequence of statesassociated with the data 110 stored in the memory array 104 of FIG. 1(such as in the memory pages 124 within the memory blocks 126 labeled‘Block X’ and ‘Block Y) at times 201, 203, and 205 during the GCfunction 202. FIG. 2A illustrates an initial state or a starting pointof the state of the data 110 stored in ‘Block X’ at time 201. FIG. 2Billustrates a changed state or an update to the state of the data 110stored in ‘Block X’ at later time 203. FIG. 2C illustrates the GCfunction 202 moving valid data 204 from ‘Block X’ to ‘Block Y’ at time205.

For example, in FIG. 2A, ‘Block X’ can store or include the valid data204 labeled ‘A.’ Other available instances of the memory pages 124 caneach be associated with a write-available status 206 representing thatthe corresponding page is unoccupied and available for writes.

In FIG. 2B, the memory system 100 can store further data, labeled ‘B’and ‘C.’ The memory system 100 can further store data ‘A2’ representingupdated version of data ‘A,’ which results in ‘A’ becoming old andstale. The valid data 204 at time 203 can correspond to data labeled‘B’, ‘C’, and ‘A2.’ The previously stored and the still existing data‘A’ can represent expired data 208. The expired data 208 can include thedata 110 previously stored but no longer useful, out-of-date, stale, orinvalid due to one or more subsequent operations, changes, or updates.

In FIG. 2C, the memory system 100 can implement the GC function 202 tofree up the memory cells 122 from a GC source block 210 (i.e., thememory block targeted for or subject of the garbage function 202 asrepresented by ‘Block X’ in FIGS. 2A, 2B, and 2C). The memory system 100can identify the valid data 204 and the expired data 208 in the GCsource block 210 for the GC function 202. As illustrated in FIG. 2C, thememory system 100 can copy the valid data 204, without the expired data208, to a new location labeled ‘Block Y’. The memory system 100 cansubsequently erase the data 110 (i.e., the duplicated valid data 204 andthe expired data 208) stored in the GC source block 210 (i.e., ‘BlockX’). As a result, the memory pages 124 of GC source block 210 cancorrespond to write-available status 206 representing availability forstoring new incoming data.

FIG. 3 is a flow diagram illustrating an example method 300 of operatingthe memory system 100 of FIG. 1 in accordance with embodiments of thepresent technology. The method 300 can include implementation of thedynamic SLC caching 130 of FIG. 1 including management of the cacheaccording to an amount of the valid data 204 of FIG. 2 in the GC sourceblock 210 of FIG. 2 for the GC function 202 of FIG. 2 .

At a box 302, the memory system 100 can perform operations on the data110 of FIG. 1 with respect to the memory device 102 of FIG. 1 , such asby writing the data 110, reading the data 110, erasing the data 110,etc. The memory system 100 can perform various different types of workunder various different conditions (e.g, the continuous workload 150 ofFIG. 1 representing steady state). While performing the work, the memorysystem 100 can designate the storage mode 134 of FIG. 1 to vary theutilization of the XLC units 132 of FIG. 1 according to the type ofwork, the condition, etc. For example, the memory system 100 candesignate the XLC units 132, capable of holding multiple bits, tooperate in the SLC mode 136 of FIG. 1 and store one bit per memory cell122 of FIG. 1 .

At a box 304, the memory system 100 can implement the GC function 202 ofFIG. 2 . The memory system 100 can implement the GC function 202 alongwith the data operation of represented in the box 302, such as byoperating in parallel. The memory system 100 can trigger the GC function202 whenever one or more memory blocks 126 of FIG. 1 become full, suchas when all of the memory pages 124 of FIG. 1 within the correspondingblocks 126 have been written and none of the pages 124 therein have thewrite-available status 206 of FIG. 2 .

The memory system 100 can implement the GC function 202 by selecting theGC source block 210 that will be targeted for the GC function 202. Thememory system 100 can select the GC source block 210 as one of thememory blocks 126 that has become full.

After selecting the GC source block 210, the memory system 100 canidentify the valid data 204 stored therein, copy the valid data 204 to anew page, and erase the GC source block 210. The memory system 100 caneffectively move the valid data 204 and erase the GC source block 210 todelete the expired data 208 of FIG. 2 , and thus free up the GC sourceblock 210 for subsequent writes. By performing the GC function 202 onthe blocks with the least amount of data, the memory system 100 canrecover the memory pages 124 therein for the subsequent writes.

At a box 306, the memory system 100 can measure an amount of the validdata 204 stored in the GC source block 210. The memory system 100 canuse the valid data 204 as a feedback mechanism in managing the SLCcache.

Whenever the GC function 202 is triggered, the memory system 100 cancalculate a valid data measure 332 representing the amount of the validdata 204 stored within the GC source block 210 before erasure. Thememory system 100 can calculate by counting the number of memory pages124 storing the valid data 204 while ignoring any pages withwrite-available status 206 or the expired data 208, or by counting thevalid pages in comparison to pages with the expired data 208 withoutempty or write-available pages. The memory system 100 can furthercalculate the valid data measure 332 as a comparison (e.g., such asusing a fraction or a percentage) between the amount of the valid data204 and the size of the GC source block 210, the amount of empty orwrite-available pages, the amount of pages with expired data 208, or acombination thereof.

At a box 308, the memory system 100 can compare the valid data measure332 with a decision threshold 334 representing a limit used to designatethe storage mode 134 of an available memory block 342 (i.e., the memorycells 122 set or designated for subsequent or upcoming data writes). Thedecision threshold 334 can represent a threshold amount of the validdata 204 corresponding to the SLC mode 136 and the XLC mode 138 of FIG.1 . Accordingly, the memory system 100 can designate the storage mode134 as either the SLC mode 136 or the XLC mode 138 based on the validdata measure 332.

The decision threshold 334 can further correspond to the WA andcharacterize a low WA state as determined for the memory system 100. Forexample, the decision threshold 334 can be a value between 0% and lessthan 25% of the GC source block 210. The decision threshold 334 can bepredetermined for the memory system 100 or determined in real-timeaccording to a predetermined method, function, operation, circuit,equation, etc.

At a box 310, the memory system 100 can designate the storage mode 134for the available memory block 342 as the XLC mode 138 when the validdata measure 332 is not less than the decision threshold 334. Forperforming workloads with high WA, as characterized by the valid datameasure 332 exceeding the decision threshold 334, the memory system 100can designate the XLC mode 138 to increase the storage capacity and slowdown the block consumption rate. Thus, the memory system 100 can use thevalid data measure 332 and the decision threshold 334 to adapt to highWA states and utilize the XLC mode 138 accordingly.

At a box 312, the memory system 100 can designate the storage mode 134for the available memory block 342 as the SLC mode 136 when the validdata measure 332 is less than the decision threshold 334. For performingworkloads with low WA, as characterized by the valid data measure 332being less than the decision threshold 334, the memory system 100 candesignate the SLC mode 136 to increase the write performance andeffectively provide burst speeds.

With the determination that the valid data measure 332 is less than thedecision threshold 334, the memory system 100 can determine that thememory device 102 is operating in a low logic saturation state 336(e.g., corresponding to a low garbage collection effort state)representing small (i.e. as defined by the decision threshold 334)amounts of the valid data relative to the advertised size of the memorydevice. The low logic saturation state 336 can be characteristic of thelow WA state. It could also indicate that the memory device is operatingat a super-hot host data that is immediately being over-written creatingblocks with smaller amount of valid data. Accordingly, the memory system100 can designate the available memory block 342 to operate in the SLCmode 136 for the upcoming or subsequent data writes.

For example, the memory system 100 can designate the SLC mode 136 for ablock corresponding to a GC cursor 338 (i.e., an address for the memoryblock subject to the GC function 202, such as an address for the GCsource block 210) as represented in box 322 or for a block correspondingto a host cursor 340 (i.e., an address for the memory block that istargeted to store incoming data or targeted for the next writeoperation) as represented in box 324. For box 322, the memory system 100can designate the GC source block 210 to operate in the SLC mode 136once it becomes released for data writes after the GC function 202. TheGC source block 210 can become the available memory block 342 once itbecomes released. For box 324, the memory system 100 can designate theavailable memory block 342 (i.e., the memory block that is currentlydesignated for the next occurring memory write) to operate in the SLCmode 136 regardless of the GC source block 210.

At a box 314, the memory system 100 can open up memory blocks for writeoperations, including allowing writes to the available memory block 342.The memory system 100 can open up the memory blocks according to thestorage mode 134 that was designated in box 310 or 312. Accordingly, thememory system 100 can continue operating on the data as represented witha feedback loop going from box 314 to box 302.

The memory system 100 can designate the available memory block 342 tooperate in the SLC mode 136 even under steady-state or the continuousworkload 150. The designation can occur whenever the GC function 202 istriggered and independent of the idle time. The memory system 100 canuse the valid data measure 332 and the decision threshold 334 tointelligently adapt to the steady state workflow and provide SLC cachewhen WA is low, to provide increase in write performance withoutsuffering from the increase in the block consumptions rate. Due to thelow WA and small amounts of the valid data 204, the GC function 202 canrecover the blocks at high speeds and sufficiently offset the blockconsumption rate. As such, the memory system 100 can designate the SLCmode 136 under steady state regardless of an amount of data previouslywritten in the SLC mode 136.

Further, the memory system 100 can designate the SLC mode 136 understeady state regardless of a data desirability measure 352 (i.e., apopularity of a trace associated with the work being performed or how“hot” the trace is) associated with a performance model 354 (i.e.,benchmark traces characterizing a pattern or type of the workload).Since the memory system 100 can designate the SLC mode 136 based ondetermining the low logic saturation state 336, the memory system 100can designate the SLC mode 136 even for super-hot benchmark traces understeady state.

Designating the storage mode 134 according to the valid data measure 332of the GC source block 210 under steady state provides the benefit ofincreasing the write performance even in the absence of idle time. Bydesignating the SLC mode 136 under steady state, the memory device 102can perform at burst speed without the idle time for super-hot data andfor user patterns operating at lower logic saturation.

Further, opening the host and GC cursor blocks in the SLC mode 136 whenthe GC WA is low (i.e., as defined by the decision threshold 334)according to the valid data measure 332 of the GC source block 210provides the benefit of regulating the number of program-erase cyclesexperienced by the XLC units 132. As such, P/E cycles of the flashmemory can be tightly controlled through the use of the SLC mode 136according to the valid data measure 332 of the GC source block 210.

The SLC caching 130 and/or the method 300 can be executed orimplemented, for example, by a processing circuitry for the memorydevice 102 or the host device 108, such as the controller 106, thememory array 104, processor for the host device 108, a portion thereinor a combination thereof. The SLC caching 130 and/or the method 300 caninclude or correspond to the configuration of the controller 106, thememory array 104, the host device 108, or a combination thereof. The SLCcaching 130 can further include, one or more methods, operations, stepsor instructions, information, or a combination thereof stored within oraccessed using the controller 106, the memory array 104, the host device108, or a combination thereof.

For illustrative purposes, the flow diagram has been described with asequence and operations discussed as examples above. However, it isunderstood that the method 300 can be different. For example, operationsrepresented in boxes 304 through 314 can be combined with operationsrepresented in the box 302. Also for example, operations represented inboxes 304 and 306 can be combined. Also for example, operationsrepresented in boxes 304 through 312 can run in parallel to thoserepresented in boxes 302 and 314.

FIG. 4 is a schematic view of a system that includes a memory device inaccordance with embodiments of the present technology. Any one of theforegoing memory devices described above with reference to FIGS. 1-3 canbe incorporated into any of a myriad of larger and/or more complexsystems, a representative example of which is system 480 shownschematically in FIG. 4 . The system 480 can include a memory device400, a power source 482, a driver 484, a processor 486, and/or othersubsystems or components 488. The memory device 400 can include featuresgenerally similar to those of the memory device described above withreference to FIGS. 1-3 , and can therefore include various features forperforming the operations discussed above. The resulting system 480 canperform any of a wide variety of functions, such as memory storage, dataprocessing, and/or other suitable functions. Accordingly, representativesystems 480 can include, without limitation, hand-held devices (e.g.,mobile phones, tablets, digital readers, and digital audio players),computers, vehicles, appliances and other products. Components of thesystem 480 may be housed in a single unit or distributed over multiple,interconnected units (e.g., through a communications network). Thecomponents of the system 480 can also include remote devices and any ofa wide variety of computer readable media.

From the foregoing, it will be appreciated that specific embodiments ofthe technology have been described herein for purposes of illustration,but that various modifications may be made without deviating from thedisclosure. In addition, certain aspects of the new technology describedin the context of particular embodiments may also be combined oreliminated in other embodiments. Moreover, although advantagesassociated with certain embodiments of the new technology have beendescribed in the context of those embodiments, other embodiments mayalso exhibit such advantages and not all embodiments need necessarilyexhibit such advantages to fall within the scope of the technology.Accordingly, the disclosure and associated technology can encompassother embodiments not expressly shown or described herein.

We claim:
 1. A memory system, comprising: a memory array including aplurality of memory cells; and a controller coupled to the memory array,the controller configured to: designate a storage mode for a target setof memory cells based on valid data stored in a source block, whereinthe target set of memory cells are configured with a capacity to storeup to a maximum number of bits per cell, and the storage mode is fordynamically configuring the target set of memory cells in as cachememory that stores a number of bits less per cell than the correspondingmaximum capacity.
 2. The memory system of claim 1, wherein the sourceblock is associated with a garbage collection (GC) process.
 3. Thememory system of claim 2, wherein the controller is configured todesignate single-level cell (SLC) mode for the storage mode when thevalid data associated with the GC process is below a decision threshold.4. The memory system of claim 2 wherein the controller is configured todesignate an extra-level cell (XLC) mode for the storage mode when thevalid data is not less than a decision threshold.
 5. The memory systemof claim 2, wherein: the source block is a GC source block; and thecontroller is further configured to: calculate a valid data measure forthe GC source block for representing an amount of the valid data withinthe GC source block; and designate the target set of memory cells tooperate in SLC mode based on comparing the valid data measure to adecision threshold.
 6. The memory system of claim 1, wherein thedecision threshold corresponds to operating the target set of memorycells in the SLC mode when the valid data within the source block isless than 25% of a total capacity of the source block.
 7. The memorysystem of claim 1 wherein the target set of memory cells is indicated bya host cursor for the subsequent or upcoming data writes.
 8. The memorysystem of claim 1 wherein the target set of memory cells is indicated bya GC cursor for the subsequent or upcoming data writes.
 9. The memorysystem of claim 1 wherein the controller is further configured to:determine a low logic saturation state for the memory array; anddesignate SLC mode for the storage mode based on the low logicsaturation state.
 10. The memory system of claim 1 wherein thecontroller is configured to designate the storage mode as SLC mode understeady-state.
 11. The memory system of claim 1 wherein the memory arrayincludes static SLC blocks designated as static cache, wherein thestatic SLC blocks store one bit per cell and is separate from the targetset of memory cells.
 12. The memory system of claim 1 wherein thecontroller is configured to designate the storage mode as SLC mode forthe subsequent or upcoming data writes regardless of an amount of thedata previously written in the SLC mode.
 13. The memory system of claim1 wherein the controller is configured to designate the storage mode asSLC mode for the subsequent or upcoming data writes regardless of a datadesirability measure associated with a performance model forcharacterizing the previously stored data.
 14. A method of operating amemory system including a controller and memory array including memorycells, the method comprising: selecting a source block storing validdata; and designating a storage mode for a target set of memory cellsbased on the valid data, wherein the storage mode is for dynamicallyconfiguring the target set of memory cells as cache memory that stores anumber of bits per cell less than the corresponding maximum storagecapacity.
 15. The method of claim 14, wherein the source block isselected for a GC process.
 16. The method of claim 14, wherein thetarget set of memory cells is indicated by a host cursor for asubsequent or upcoming data writes.
 17. The method of claim 14, whereinthe target set of memory cells is indicated by a GC cursor for asubsequent or upcoming data writes.
 18. The method of claim 14, whereindesignating the storage mode includes designating a SLC mode for thestorage mode when the valid data is less than a decision threshold. 19.The method of claim 18, wherein designating the SLC mode includesdesignating the SLC mode regardless of an amount of the data previouslywritten in the SLC mode, regardless of a data desirability measureassociated with a performance model for characterizing the previouslystored data, or a combination thereof.
 20. The method of claim 14,wherein designating the storage mode includes designating the storagemode as SLC mode under steady-state.